Oxygen deficiency and Sn doping of amorphous Ga2O3
نویسندگان
چکیده
منابع مشابه
Cathodoluminescence studies of the inhomogeneities in Sn-doped Ga2O3 nanowires.
Cathodoluminescence real-color imaging and spectroscopy were employed to study the properties of Ga(2)O(3) nanowires grown with different Sn/Ga ratios. The structures grown under Sn-rich conditions show large spectral emission variation, ranging from blue to red, with a green transition zone. Spectral emission changes correlate with changes in the chemical composition and structure found by ene...
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Undoped and Tin (Sn) doped Molybdenum trioxide (α-MoO3) nanostructured thin films (which has lamellar (2D) structure) have been prepared using a simple and cost effective technique of spray pyrolysis on glass substrates at 450 ℃. Surface morphology, optical and structural properties of samples have been investigated using FESEM, UV-Vis spectroscopy and XRD analysis techniques, respectively. FES...
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During cxposurc of thin amorphous WO, films to UV light, both the optical absorptivity and thc electrical conductibity increase, Using optically excited surface plasmons. we were ablc to mcnsure even subtle changes of the absorpt~vity of 10 ntn thtck films simuFtaneously with their electrical resistivity a t varivus temperatuscs. Our measurements show that the temperature dependence and thc dcp...
متن کاملNitrogen doping of amorphous carbon thin films
Nitrogenated and hydrogenated amorphous carbon (a-C:H:N) films have been deposited by a plasma beam source using a gas mixture of C2H2 , Ar and N2 . The Ar/C2H2 ratio is kept constant at a ratio of 3, with the nitrogen flow allowed to vary. Nonnitrogenated films, with Ar/C2H2 ratios of 3 and 6 were also deposited and analyzed before attempting to identify the modifications to the microstructura...
متن کاملNitrogen Doping of Amorphous Carbon Surfaces
Rights: © 1999 American Physical Society (APS). This is the accepted version of the following article: Kaukonen, M. & Nieminen, Risto M. & Pöykkö, S. & Seitsonen, Ari P. 1999. Nitrogen Doping of Amorphous Carbon Surfaces. Physical Review Letters. Volume 83, Issue 25. 5346-5349. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.83.5346, which has been published in final form at http://journals....
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2016
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4938473